Si P-N JUNCTION — 3D DOPED LATTICE

diamond cubic · Na=Nd≈10¹⁵cm⁻³ · p-side left (boron acceptors) · n-side right (phosphorus donors) · drag to orbit · scroll zoom
Legend
Si atom (type 0)
C/N atom (zincblende/wurtzite)
Donor P (n-side)
Acceptor B (p-side)
Covalent bond
Valence e⁻ (Ev orbital)
Drift e⁻ (field-driven)
Diffusion e⁻ (∇n-driven)
Drift h⁺ (field-driven)
Diffusion h⁺ (∇p-driven)
Tunnel e⁻ (Zener)
Impact e⁻ (avalanche)
Impact h⁺ (avalanche)
Impact flash / ionized
Lattice Type
Controls
Applied Va 0.0 V
Lattice size 3×3×6
Atom radius 1.0
⚛ Si diamond cubic lattice\np-side left · n-side right
Live Stats
Free e⁻ 0
Holes h⁺ 0
Ionized donors 0
Ionized accept. 0
Va applied OFF
Mode LATTICE
Doping Level
N-SIDE (phosphorus)
P has 5 valence e⁻
4th bond to Si network
5th e⁻ loosely bound ~45meV
→ ionizes at room T → free e⁻

P-SIDE (boron)
B has 3 valence e⁻
missing 4th bond → hole
accepts e⁻ → B⁻ + free h⁺

DEPLETION
e⁻ diffuse p→n
holes diffuse n→p
built-in field opposes
equilibrium at V_bi